HV Testing

High Power Device Test System(GaN, SiC, MOSFET, IGBT)

Overview

Advantages

Enhanced measurement efficiency under various operating conditions
All-in-one device characterization system supporting IV, CV, and pulsed/dynamic IV measurements
Seamless switching between CV and IV measurements without re-cabling
Automated data logging with customizable report generation
Fully compatible with factory automation systems (CIM/SECS/GEM integration)

Application

High Power Test Parameters

Static parameter:

Vth,Rdson,ID-VD,ID-VG
BVdss,Igss,Idss

Dynamic parameter C-V:

Cgd,Cgs,Cgc,Ciss,Coss,Crss
Rg

High Power Dynamic Test Parameters

Dynamic parameter: AC (Double Pulse)

Short-circuit & Reverse Recover