Precision measurement across a wide range of operating conditions​​​

• All-in-one solution for power device characterization up to 1500 A & 10 kV​
• Medium current measurement with high voltage bias (e.g. 500 mA at 1200 V)​
• μΩ on-resistance measurement capability​
• Accurate, sub-picoamp level, current measurement at high voltage bias​
• Fully automated thermal testing from -50 ℃ to +250 ℃

Extensive device evaluation capabilities​​​

• Fully automated Capacitance (Ciss, Coss, Crss, etc.) measurement at up to 3000 V of DC bias​
• High power pulsed measurements down to 10 μs​
• Both packaged device and on-wafer IGBT/FET gate charge measurement​
• High voltage/high current fast switch option to characterize GaN current collapse effect​
• Up to five high voltage (3 kV) source/measure channels for maximum flexibility​
• Safe temperature dependent testing via an interlock-equipped test fixture

Improved measurement efficiency​​​

• Switch between high-voltage and high-current measurements without the need to recable​
• Automatic test circuit formation for transistor junction capacitances (Ciss, Coss, Crss, Cgs, Cgd, Cds, etc.) for both packaged and on-wafer devices​
• Standard test fixtures with interlock for safe packaged power device testing​
• Supported and secure on-wafer high-power testing over 200 A and up to 10 kV​
• The oscilloscope view allows verification of applied voltage and current waveforms​
• MS Windows-based EasyEXPERT software facilitates data management and analysis

Upgradable and scalable hardware architecture​​​

• • A wide selection of measurement modules​
  • Support for high-power devices with up to 6 pins